| PART |
Description |
Maker |
| MGF0953P11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0913A MGF0913A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0919A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| NE3520S03 NE3520S03-T1C NE3520S03-T1D |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
Renesas Electronics Corporation
|
| NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D N |
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 15瓦C波段砷化镓场效应管N沟道砷化镓场效应晶体
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| CFY35 Q62702-F1394 CFY35-20 CFY35-23 Q62702-F1393 |
From old datasheet system
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
SCREWDRIVER, MULTI BLADE 7PCSCREWDRIVER, MULTI BLADE 7PC; Kit contents:7 Piece Set X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
http://
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| CFY30 Q62703-F97 |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| CGD1044HI |
1 GHz, 25 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| CGD987HCI |
1 GHz, 27 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| MGF0907 MGF0907B |
L /S BAND POWER GaAs FET
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| MGF1601B-01 |
High-power GaAs FET
|
Mitsubishi Electric Sem...
|
