| PART |
Description |
Maker |
| P600M6A10 P600B6A1 P600A6A05 P600G6A4 P600G P600J |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS voltage 700V. Maximum DC blocking voltage 1000V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V
SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 6.0 Amperes) 一般整流（电压范围- 50000伏特，电六点○安培）
|
WINGS[Wing Shing Computer Components]
Vishay Intertechnology, Inc.
|
| 2N6504-D |
Reverse Blocking Thyristors
|
ON Semiconductor
|
| IXRH50N80 IXRH50N60 |
IGBT with Reverse Blocking capability
|
IXYS[IXYS Corporation]
|
| IXRA15N120 |
IGBT with Reverse Blocking capability
|
IXYS
|
| DGT409BCA07 |
Reverse Blocking Gate Turn-off Thyristor
|
Dynex Semiconductor
|
| DGT409BCA6565 DGT409BCA |
Reverse Blocking Gate Turn-off Thyristor
|
DYNEX[Dynex Semiconductor]
|
| MCR12DCM MCR12DCMT4 MCR12DCMT4G MCR12DCN MCR12DCNT |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
| MCR16N MCR16NG MCR16 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
| TIC106A TIC106B TIC106C |
(TIC106x) P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductors
|
| MCR68-2 MCR68-D |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
| 2N6507 2N6504 2N6505 |
SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
|
Digitron Semiconductors
|
| IXRH40N120 |
Power Discretes/IGBTs/Reverse Blocking Series
|
IXYS Corporation
|
