| PART |
Description |
Maker |
| NE71300-N NE71300-M NE71300-L NE713 NE71383B |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
| NE34018-TI-64-A NE34018-TI-63-A NE34018-A |
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
|
California Eastern Laboratories
|
| MGA-665P8-BLK MGA-665P8-TR1 MGA-665P8 MGA-665P8-TR |
GaAs Enhancement-Mode PHEMT 0.5 6 GHz Low Noise Amplifier GaAs增强型PHEMT.56 GHz的低噪声放大
GaAs Enhancement-Mode PHEMT 0.5 - 6 GHz Low Noise Amplifier
From old datasheet system
MGA-665P8 · MGA-665P8 0.5-6GHz Low Noise Amplifier
|
Avago Technologies, Ltd.
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| AA038N1-00 AA038N2-00 |
28-40 GHz的砷化镓MMIC低噪声放大器
GT 8C 2#0 6#12 PIN PLUG
280 GHz GaAs MMIC Low Noise Amplifier
28-40 GHz GaAs MMIC Low Noise Amplifier
|
Alpha Industries, Inc.
Alpha Industries Inc
ALPHA[Alpha Industries]
http://
|
| NE713 NE71300-L NE71300-N NECCORP.-NE713 |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
L降至Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC Corp.
|
| MGF1402B |
LOW NOISE GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGF1303B 1303B MGF1303 |
From old datasheet system
LOW NOISE GAAS FET
|
Mitsubishi Electric Semiconductor
|
| MGF1907A |
TAPE CARRIER LOW NOISE GaAs FET
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MGF1902B 1902B |
From old datasheet system
TAPE CARRIER LOW NOISE GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGF1908A |
TAPE CARRIER LOW NOISE GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| NE3521M04-T2B-A NE3521M04-T2-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
Renesas Electronics Corporation
|
| SPF-2000 |
Low Noise High Linearity pHEMT GaAs FET 0.1 - 12 GHz Operation
|
SIRENZA[SIRENZA MICRODEVICES]
|
