| PART |
Description |
Maker |
| D1024UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSHPULL 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH-PULL
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| D1002UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应40W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| STK433-040-E |
2-channel class AB audio power IC 40W 40W
|
Sanyo Semicon Device
|
| MMBZ15VAL MMBZ9V1AL MMBZ5V6AL10 MMBZ27VAL MMBZ6V2A |
24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS
TVS UNIDIRECT CA 40W 14.5V SOT23 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| BD242 BD242C BD241 BD241A BD241B BD241C BD242A BD2 |
POWER TRANSISTORS(3A,40W) 功率晶体管（3A，功0W
POWER TRANSISTORS(3A/40W)
|
Mospec Semiconductor, Corp.
MOSPEC[Mospec Semiconductor]
|
| D1003UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1004 D1004UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应80W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2021UK D2021 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2008UK D2008 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-400MHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-400MHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| TA044-050-40-43 |
4.4 ~ 5.0GHz 20W High PowerAmplifier
|
Transcom, Inc.
|
