| PART |
Description |
Maker |
| UPD4265800LE-A80 UPD4264800LE-A80 UPD4265800LE-A70 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
64K x 16 Static RAM
1K x 8 Dual-Port Static RAM
1-Mbit (64K x 16) Static RAM x8快速页面模式的DRAM
|
STMicroelectronics N.V.
|
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IC61S6432-8TQI IC61S6432 IC61S6432-117PQ IC61S6432 |
100MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM
64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
From old datasheet system
200MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
75MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS61LV6424 IS61LV6424-10TQ IS61LV6424-9TQ IS61LV64 |
64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| CY62137CVSL-70BVI CY62137CV CY62137CV25 CY62137CV2 |
Very high speed: 55 ns and 70 ns
(CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM
32-Bit Transparent D-Type Latch with 3-State Outputs 96-LFBGA -40 to 85
2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 55 ns, PBGA48
2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns
32Kx8 bit high speed static RAM (5V operating), 15ns
32Kx8 bit high speed static RAM (5V operating), 12ns
32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作（，进化引脚了。在商业温度范围工作
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
|
| CY7C147-45DMB CY7C147-45PC CY7C147 CY7C147-25PC CY |
4K x 1 Static RAM 4K的1静态RAM
4K x 1 STATIC RAM 4K X 1 STANDARD SRAM, 25 ns, PDIP18
|
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor, Corp.
|
| S71JL064HA0 |
Stacked Multi-chip Product (MCP) Flash Memory And Psram CMOS 3.0Volt-only, Simultaneous Operation Flash Memories And Static RAM/pseudo-static RAM
|
AMD
SPANSION
|
| IS61LV12824 21_61LV12824 IS61LV12824-9B |
9ns; 3.3V; 128K x 24 high-speed CMOS CMOS static RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM
|
ICSI
|
| M24D16161ZA-70BIG |
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48
16-Mbit (1M x 16) Pseudo Static RAM
|
Elite Semiconductor Memory Technology, Inc.
Elite Semiconductor Memory Technology Inc.
|
| IS61C3216 IS61C3216NBSP IS61C3216-20TI IS61C3216-1 |
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K的16 HIGH-SPEED的CMOS静态RAM
ASYNCHRONOUS STATIC RAM
|
Integrated Silicon Solution, Inc.
ICSI[Integrated Circuit Solution Inc]
|
