| PART |
Description |
Maker |
| CT20VSL-8 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
|
Renesas Electronics Corporation
|
| CT20ASL-8 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
|
Renesas Electronics Corporation
|
| CT30TM-8 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
|
Renesas Electronics Corporation
|
| CT20VM-8 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
|
Renesas Electronics Corporation
|
| CT20VML-8 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
|
Renesas Electronics Corporation
|
| CT25ASJ-8 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
|
Renesas Electronics Corporation
|
| CT35SM-8 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
POWEREX[Powerex Power Semiconductors]
|
| CT30VS-8 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| CT20TM-8 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| CT30TM-8 |
128 x 64 pixel format, LED Backlight available 130 A, 400 V, N-CHANNEL IGBT, TO-220F
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| QM200HC-M |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
