PART |
Description |
Maker |
JANTXV1N827ATR-2 JANS1N827ATR-2 JANTXV1N827TR-2 JA |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
|
Microsemi, Corp. Microsemi Corporation
|
1N821A 1N822 1N823 1N821 1N829A 1N823A 1N824 1N825 |
TRANSF 17VAC .15A FLAT PACK PWR Temperature Compensated Zener Reference Diodes(温度补偿齐纳基准二极 TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 温补参考稳压二极管
|
Compensated Deuices Inc... CDI-DIODE[Compensated Deuices Incorporated] NXP Semiconductors N.V.
|
CMKTC825A |
SURFACE MOUNT ULTRAmini TEMPERATURE COMPENSATED SILICON ZENER DIODE announces the release of the CMKTC825A temperature compensated (TC) Zener diode packaged in a space saving ULTRAmini SOT-363 surface mount case.
|
CENTRAL[Central Semiconductor Corp]
|
MPXM2202 |
200 kPa On-Chip Temperature Compensated and Calibrated Silicon Pressure Sensors From old datasheet system 200 kPa On-Chip Temperature Compensated & Calibrated Pressure Sensors
|
Motorola
|
TPT-13-6036 TPT-13-6026 |
Temperature Compensated Power Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
TPT-13-6016 |
Temperature Compensated Power Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
CPT-18-6028 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
CPT-13-6036 |
Temperature Compensated Power Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
TPT-18-6036 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
6662 6661 6663 6664 |
Temperature Compensated Crystal
|
Vectron International, Inc
|
ECS-500-144-B ECS-500 |
TEMPERATURE COMPENSATED OSCILLATOR
|
ECS, Inc.
|