| PART |
Description |
Maker |
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| TMP93C071 E_030331_93C071_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
From old datasheet system
|
Toshiba
|
| TMP95C061B E_030331_95C061B_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
From old datasheet system
|
Toshiba
|
| PMEG1030EJ PMEG1030EH |
PMEG1030EJ; 10 V, 3 A very low Vf MEGA Schottky barrier rectifier in SOD323F package
10V, 3 A ULTRA LOW V-f MEGA SCHOTTKY BARRIER RECTIFIERS
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| GPMP900 GPMP900-24 GPMP900-28 GPMP900-36 GPMP900-4 |
High Power Supplies 900 Watt AC/DC Universal Input Power Supply
|
SL Power Electronics
|
| BCR16HM-12 BCR16HM-12L |
FUSEHOLDER, MEGAFUSEHOLDER, MEGA; Fuse size code:MEGA; Current rating:250A; Centres, fixing:101.6mm; Colour:Black; Depth, external:38.5mm; Diameter, fixing hole:6.35mm; Length / Height, external:38mm; Material:Thermoplastic, glass
THYRISTOR MODULE|TRIAC 晶闸管模块|可控
|
YEONHO Electronics Co., Ltd.
|
| 2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION
|
NEC
|
| PBL40310 |
3.5 V GSM 900 MHz Power Amplifier
|
ERICSSON[Ericsson]
|
