| PART |
Description |
Maker |
| C8062-01 C8060 C8061 |
BP-112; Vcc= 3.0 to 5.5 volts, Temp= -20 to 85 C; Package: PLBG0112GA-A
InGaAs multichannel detector head
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| DDU4C-5200 DDU4C-5050 DDU4C-5250 DDU4C-5100 DDU4C- |
5-TAP HCMOS-INTERFACED FIXED DELAY LINE (SERIES DDU4C)
H8S/2300 Series, 2319 Group, TFP-100B; Vcc= 3.0 to 3.6 volts, Temp= -20 to 75 C, 25 MHz; Package: PTQP0100KA-A
H8S/2300 Series, 2319 Group, TFP-100B; Vcc= 3.0 to 3.6 volts, Temp= -20 to 75 C, 20 MHz; Package: PTQP0100KA-A
H8S/2300 Series, 2329 Group, DRAMC FP-128B; Vcc= 2.7 to 3.6 volts, Temp= -20 to 75 C; Package: PRQP0128KB-A
5-TAP, HCMOS-INTERFACED FIXED DELAY LINE (SERIES DDU4C) 5，技术咨询，HCMOS界面的固定延迟线（系列DDU4C
5-TAP, HCMOS-INTERFACED FIXED DELAY LINE (SERIES DDU4C) 5，技术咨询，HCMOS界面的固定延迟线（系DDU4C
ACTIVE DELAY LINE, TRUE OUTPUT, PDSO14
ACTIVE DELAY LINE, TRUE OUTPUT, DIP8
ACTIVE DELAY LINE, TRUE OUTPUT, DSO14
|
ETC[ETC]
Electronic Theatre Controls, Inc.
DATA DELAY DEVICES INC
|
| 1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp.
Microsemi Corporation
|
| IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128K x 8 Ultra Low Power and Low VCC SRAM
From old datasheet system
55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| UTV005P |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 0.5; Gain (dB): 10; Vcc (V): 20; ICQ (A): 0.22; IMD Type (dB): -60; Case Style: 55FU-2 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
0.5 Watts, 20 Volts, Class A UHF Television - Band IV & V
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Microsemi, Corp.
|
| 2SC5700 |
RF SMALL SIGNAL TRANSISTOR
SH2 Series, 7086 Group, Two ADC circuits, 6-ch 16-bit MTU2, 3-ch 16-bit MTU2S, Port Output Enable, 2-ch CMT, UBC, 5v IO, 15 mA IO, BusTrace, AUD TFP-100B; Vcc= 3.0 to 5.5 volts, Temp= 0 to 50 C; Package: PTQP0100KA-A
Silicon NPN Epitaxial VHF/UHF wide band amplifier
Silicon NPN Transistor
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| 0405SC-1000M MICROSEMIPOWERPRODUCTSGROUP-0405SC-10 |
SiC UHF: 400-450MHz, Class AB, Common Gate-Pulsed; P(out) (W): 1000; P(in) (W): 180; Gain (dB): 8; Vcc (V): 125; Pulse Width (µsec): 300; Duty Cycle (%): 10; Case Style: 55KT FET-1 UHF BAND, Si, N-CHANNEL, RF POWER, JFET
1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT
|
Microsemi, Corp.
Microsemi Corporation
|
| PE6808 |
2 Watts WR-112 RF Load Up To 10 GHz
|
Pasternack Enterprises, Inc.
|
| X2784AG-08TT I2781A-08SR I2781A-08ST I2781A-08TR I |
PS MEDICAL SWITCHER 15V .73A 156 MHz, OTHER CLOCK GENERATOR, PDSO8
General Purpose EMI Reduction IC 156 MHz, OTHER CLOCK GENERATOR, PDSO8
General Purpose EMI Reduction IC 312 MHz, OTHER CLOCK GENERATOR, PDSO8
General Purpose EMI Reduction IC 78 MHz, OTHER CLOCK GENERATOR, PDSO8
PS LINEAR DUAL 5V@6A 9-15@2.5A
ICs for Inductive Proximity Switches; Package: P-DSO-14; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 0.9 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
ICs for Inductive Proximity Switches; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 0.9 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
ICs for Inductive Proximity Switches; Package: P-DSO-8; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 1.0 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
ICs for Inductive Proximity Switches; Package: P-DSO-8; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 1.0 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
|
Alliance Semiconductor ...
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
http://
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