| PART |
Description |
Maker |
| BUL58B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
| BUL52A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
Seme LAB
|
| BUL47A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
| BUL52B BUL52 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUL50A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
Seme LAB
TT electronics Semelab Limited
|
| BUL62A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BUL72A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| XD1004-BD-EV1 XD1004-BD-000V |
10.0-40.0 GHz GaAs MMIC Distributed Amplifier 10000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
10.0-40.0 GHz GaAs MMIC Distributed Amplifier 10.0-40.0千兆赫的GaAs MMIC分布式放大器
|
Mimix Broadband, Inc.
|
| 33793 MC33793DR2 |
Distributed System Interface (DSI) Sensor Interface SPECIALTY ANALOG CIRCUIT, PDSO16
Distributed System Interface (DSI) Sensor Interface 分布式系统接口（DSI）传感器接口
Distributed System Interface (DSI) Sensor Interface(分布式系统接口（DSI）传感器接口) 分布式系统接口（DSI）传感器接口（分布式系统接口DSI）的传感器接口）
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
飞思卡尔半导体(中国)有限公司
MOTOROLA INC
|
| IT8673F |
Advanced Input / Output (Advanced I/O) Preliminary Specification V0.5
GT 35C 35#12 SKT PLUG
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| AP01L60AT10 |
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
|
Advanced Power Electronics Corp.
|
