| PART |
Description |
Maker |
| IS62WV51216BLL-55BLI IS62WV51216ALL-70XI IS62WV512 |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 12k × 16低电压，超低功耗的CMOS静态RAM
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 55 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable
Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| IS62WV51216ALL IS62WV51216BLL-45B IS62WV51216ALL-7 |
512K X 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS65WV12816BLL IS65WV12816ALL |
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS62WV2568BLL-55BLI IS62WV2568ALL-70BI IS62WV2568B |
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 256K X 8 STANDARD SRAM, 70 ns, PBGA36
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 256K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Integrated Silicon Solution, Inc.
|
| BS616UV8011BC BS616UV8011FI BS616UV8011 BS616UV801 |
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
|
BSI[Brilliance Semiconductor]
|
| BS62UV2001TI BS62UV2001 BS62UV2001SC BS62UV2001SI |
Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit
|
BSI[Brilliance Semiconductor]
|
| BS62UV1027SIG10 |
Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit
|
BSI
|
| 6206-35/BXAJC 6206-45/BXAJC 6206-45/BYAJC 6206-100 |
x8 SRAM
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits
High-Voltage, Low-Current Voltage Monitors in SOT Packages
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits x8的SRAM
|
ITT, Corp.
|
| BS616UV1010CI |
150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit
|
Brilliance Semiconductor
|
