| PART |
Description |
Maker |
| BH2222FV |
8bit 20ch D/A converter
|
ETC[ETC]
|
| BH2220FVM |
Video LSIs > For DVC > Tuning D/A converter
8bit 3ch D/A converter
|
Rohm
|
| AK9844F AK9844 |
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 160V; Case Size: 22x25 mm; Packaging: Bulk
4Kbit EEPROM with 4ch 8bit D/A Converter
|
Asahi Kasei Microsystems Co.,Ltd
AKM[Asahi Kasei Microsystems]
|
| MAX150 MAX150ACPP MAX150ACWP MAX150AEPP MAX150AEWP |
CMOS High Speed 8Bits ADC(500ksps,单通道,串行8位ADC)
CMOS High Speed 8Bit A/D Converter with Refrence and Track/Hold Function 1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, PDSO20
16-Bit Transceivers With Parity Generators / Checkers And 3-State Outputs 56-TSSOP -40 to 85 1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, PDIP20
CMOS High Speed 8Bit A/D Converter with Refrence and Track/Hold Function 1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, UUC20
16-Bit Bus Transceivers And Registers With 3-State Outputs 56-SSOP -40 to 85
From old datasheet system
CMOS High Speed 8-Bit A/D Converter with Reference and Track/Hold Function
"CMOS, 1.3?s, 8-Bit ADC with Voltage Reference and Track/Hold"
CMOS, 1.3µs, 8-Bit ADC with Voltage Reference and Track/Hold
|
STMicroelectronics N.V.
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
MAXIM - Dallas Semiconductor
|
| TC554001FI TC554001FI-10 TC554001FI-85 TC554001FTI |
524288 WORDS x 8BIT STATIC RAM
524,288 WORDS x 8BIT STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B- |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| A23L1616 A23L16161 A23L16161V A23L16162 A23L16162V |
70ns 2M x 16/4M x 8bit CMOS MASK ROM
100ns 2M x 16/4M x 8bit CMOS MASK ROM
Power Resistor; Series:MK; Resistance:20ohm; Resistance Tolerance: /- 1 %; Power Rating:0.75W; Voltage Rating:400V; Temperature Coefficient: /-50 ppm; Mounting Type:Through Hole; Operating Temp. Min:0 C; Terminal Type:Radial Leaded
2M X 16 / 4M X 8 BIT CMOS MASK ROM 200万16 / 4米8位CMOS掩膜ROM
|
AMICC[AMIC Technology]
AMIC Technology Corporation
AMIC Technology, Corp.
|
| KM48S16030 KM48S16030T-G_F10 KM48S16030T-G_F8 KM48 |
4M x 8Bit x 4 Banks Synchronous DRAM
4M x 8Bit x 4 Banks Synchronous DRAM 4米8位4银行同步DRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| LC3564RMRT-10LV LC3564RMRT-12LV LC3564RMRT-15LV |
64K (8192words x 8bit) SRAM
|
SANYO
|
