PART |
Description |
Maker |
BFG25AW BFG25AW_X BFG25AW/X BFG25X |
NPN 5 GHz wideband transistors C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
BFR106 |
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体 NPN 5 GHz wideband transistor
|
NXP Semiconductors Philips Semiconductors
|
BFG135 |
NPN 7GHz wideband transistor(NPN 7 GHz 宽带晶体
|
Philips Semiconductors NXP Semiconductors
|
TSDF2020W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise; 25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
TSDF1920W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise; 25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc. Vishay Siliconix
|
BFG505W BFG505W_X BFG505W/X |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% NPN 9 GHz wideband transistors
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
EVAL-ADG936EB ADG936 ADG936BCP ADG936BCP-500RL7 AD |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT 宽带4千兆赫,36千兆赫的CMOS 1.65 V分贝.75 V的隔离,双路SPDT Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, QCC20
|
AD[Analog Devices] Analog Devices, Inc. ANALOG DEVICES INC
|
BFG198 |
NPN 8 GHz wideband transistor
|
Philips
|
BFS540 |
NPN 9 GHz wideband transistor
|
http:// Philips Semiconductors
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