| PART |
Description |
Maker |
| BD201 BD203 BD204 |
SILCON EPITAXIAL-BASE POWER TRANSITORS
|
Comset Semiconductor
|
| BD201 BD203 |
(BD201 / BD203) SILCON EPITAXIAL-BASE POWER TRANSISTORS
|
Comset Semiconductors
|
| BDX63A BDX63C BDX63 BDX63B |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BDS10SMD BDS10SMD05 BDS12 BDS12SMD BDS11SMD05 BDS1 |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES
|
Seme LAB
|
| 1SV324 |
DIODE SILCON EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| TIP112 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| TIP140T |
NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt ResistorNPN硅外延达林顿晶体管（内置基极-射极分流电阻单片结构
|
Fairchild Semiconductor Corporation
|
| 2SC4527 E000955 |
TV TUNER, UHF OSCILLATOR APPLICATIONS (COMMON BASE)
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF OSCILLATOR, COVBERTER APPLICATIONS)(COMMON BASE)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| BD795 BD798 BD796 BD801 BD802 BD800 BD799 BD797 |
EPITAXIAL-BASE,SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%
EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
INTERSIL[Intersil Corporation]
|
| GM194A |
N P N S I L I C O N P L AN A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
| 2SC2484 2SA1060 |
Silicon PNP epitaxial base mesa transistor, 80V, 5A
SILICON EPITAXAL BASE VLESA TRANSISTOR
|
Panasonic Semiconductor
|
