| PART |
Description |
Maker |
| 2N6298 JANTX2N6298 JANTX2N6299 JAN2N6298 JAN2N6299 |
PNP Darlington Transistor
PNP DARLINGTON POWER SILICON TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
| BCP48 BCP28 |
PNP Silicon Darlington Transistors 进步党硅达林顿晶体管
Darlington Transistors - PNP Silicon Darlington Transistor for general AF applications
|
INFINEON[Infineon Technologies AG]
|
| MPSA12DA MPSA12DB MPSA12DC MPSA42DB MPSA42DC MPSA4 |
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | CHIP 晶体管|晶体管|进步党| 150伏五（巴西）总裁|芯片
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | CHIP 晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁|芯片
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | CHIP 晶体管|晶体管| npn型| 140伏特五（巴西）总裁|芯片
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|30VV(BR)CEO|CHIP
|
Zetex Semiconductor PLC
Central Semiconductor, Corp.
Cypress Semiconductor, Corp.
|
| SLA4390 |
PNP NPN Darlington Transistor (H-Hridge)(PNP NPN达林顿晶体管H桥）) 5 A, 100 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
|
Sanken Electric Co., Ltd.
|
| CFB612 |
60.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 120V V(BR)CEO | 6A I(C) | TO-220FP
|
Continental Device India Limited
|
| 2N6286 2N6287 JANTXV2N6286 JANTXV2N6287 JANTX JANT |
PNP DARLINGTON POWER SILICON TRANSISTOR
PNP Darlington Transistor
|
MICROSEMI[Microsemi Corporation]
|
| BDX34D BDX34B-S |
PNP DARLINGTON 80V 10A 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Bourns Inc.
Bourns, Inc.
|
| 2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 4A条一（c）|园区
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd.
Atmel, Corp.
HIROSE ELECTRIC Co., Ltd.
|
| CSB810 |
2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 - 20000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220AB 晶体管|晶体管|达林顿|进步党| 110伏特五（巴西）总裁| 8A条一（c）| TO - 220AB现有
|
Continental Device India Limited
Won-Top Electronics Co., Ltd.
|
| MPSA63 MPSA64 MPSA62 |
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE DARLINGTON TRANSISTOR)
|
KEC[KEC(Korea Electronics)]
|
| KTB1234TNBSP KTB1234T |
Darlington Transistor
EPITAXIAL PLANAR PNP TRANSISTOR
From old datasheet system
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
