| PART |
Description |
Maker |
| FC903 FC903-TR-E |
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE
High-Speed Switching Composite Diode Silicon Epitaxial Planar Type
High-Speed Switching Composite Diode
|
ON Semiconductor
SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
|
| BUP410D Q67040-A4425-A2 |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125
|
Siemens Semiconductor Group
SIEMENS AG
|
| 1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| 2SC3307 E000825 |
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
From old datasheet system
HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS
|
Toshiba Semiconductor
|
| BAR99 Q62702-A388 |
Silicon Switching Diode (For high-speed switching)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| Q62702-A693 BAV74 |
From old datasheet system
Silicon Switching Diode Array (For high-speed switching Common cathode)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| Q62702-A1030 BAV70W |
From old datasheet system
SILICON SWITCHING DIODE ARRAY (FOR HIGH SPEED SWITCHING APPLICATIONS COMMON CATHODE)
|
Siemens Semiconductor Group
SIEMENS AG
|
| RD0506T-H RD0506T-TL-H RD0506T12 ENA1574B |
Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
|
Sanyo Semicon Device
|
| CMDD4448 |
SUPERminiTM HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| BAS16W |
High Speed Switching Diode 350mW 0.1 A, 75 V, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
Micro Commercial Components Corp.
|
