| PART |
Description |
Maker |
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| M68AF031A |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM(256 K(32K x 8)5.0V,异步SRAM)
|
意法半导
|
| P4C422-25DC P4C422-25DMB P4C422-12FC P4C422-15FC P |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 12 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 15 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, PDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| M95256 M95256BN M95256-BN1T M95256-BN3T M95256-BN5 |
256 Kbit (32K x8)serial SPI bus EEPROM with high speed clock, operating = 2.5 V to 5.5 V
256 Kbit (32K x8)serial SPI bus EEPROM with high speed clock, operating = 4.5 V to 5.5 V
128 Kbit (16K x8)serial SPI bus EEPROM with high speed clock, operating = 2.7 V to 3.6 V
128 Kbit (16K x8)serial SPI bus EEPROM with high speed clock, operating = 4.5 V to 5.5 V
256/128 Kbit Serial SPI Bus EEPROM With High Speed Clock
128 Kbit (16K x8)serial SPI bus EEPROM with high speed clock, operating = 1.8 V to 3.6 V
128 Kbit (16K x8)serial SPI bus EEPROM with high speed clock, operating = 2.5 V to 5.5 V
256 Kbit (32K x8)serial SPI bus EEPROM with high speed clock, operating = 1.8 V to 3.6 V
256 Kbit (32K x8)serial SPI bus EEPROM with high speed clock, operating = 2.7 V to 3.6 V
|
STMicroelectronics
ST Microelectronics
SGS Thomson Microelectronics
|
| IDT70V9269L12PRF IDT70V9269L12PRFI IDT70V9279S9PRF |
32K x 16 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
16K x 16 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
From old datasheet system
Small Signal Diode
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 12 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 25 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 20 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 18 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 高.3 32K的16 SYNCHRONOU S双，端口静态内
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| P93U422-35FMB P93U422-35PMB P93U422-35SMB |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor, Corp.
Microchip Technology, Inc.
|
| IS64WV3216BLL-15BLA3 IS64WV3216BLL-15BA3 IS64WV321 |
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| CY14B256L-SZ35XCT CY14B256L-SZ45XCT CY14B256L-SP45 |
256-Kbit (32K x 8) nvSRAM 32K X 8 NON-VOLATILE SRAM, 45 ns, PDSO32
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IDT70V3379S6PRFI IDT70V3379S IDT70V3379S4BC IDT70V |
From old datasheet system
HIGH-SPEED 3.3V 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 32K X 18 DUAL-PORT SRAM, 6 ns, PBGA256
HIGH-SPEED 3.3V 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 32K X 18 DUAL-PORT SRAM, 6 ns, PQFP128
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| M27256 M27256-F1 M27256-F6 M27256-4F6 M27256-1F1 M |
NND - NMOS 256 KBIT (32KB X8) UV EPROM
NMOS 256K 32K x 8 UV EPROM
32K X 8 UVPROM, 200 ns, CDIP28
32K X 8 UVPROM, 250 ns, CDIP28
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| CY7C199CN-20ZXIT CY7C199CNL-15VC CY7C199CN-20ZI CY |
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.5 to 5.5 V; 32K X 8 STANDARD SRAM, 20 ns, PDSO28
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 15 ns, PDSO28
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 20 ns, PDSO28
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
Cypress Semiconductor, Corp.
|
