PART |
Description |
Maker |
UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
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NEC[NEC]
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APT8058HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 13.5A 0.580 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT1001R1HVR |
POWER MOS V 1000V 9A 1.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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APT10M11JVR |
POWER MOS V 100V 144A 0.011 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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APT40M70LVR |
POWER MOS V 400V 57A 0.070 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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APT30M90AVR |
POWER MOS V 300V 33A 0.090 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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APT12040JVR |
POWER MOS V 1200V 26A 0.400 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
ADPOW[Advanced Power Technology]
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APT5014B2VR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 37A 0.140 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT8030B2VR |
POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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APT20M19JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 112A 0.019 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT5010JVRU2 |
POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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