| PART |
Description |
Maker |
| FDS898407 FDS8984 |
N-Channel PowerTrench? MOSFET
N-Channel PowerTrench庐 MOSFET
N-Channel PowerTrench㈢ MOSFET
N-Channel PowerTrench MOSFET 30V, 7A, 23mOhm 7 A, 30 V, 0.032 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
|
| FDW2515N FDW2515NZ |
CAP CER 68000PF 100V 10% X7R1210 5.8 A, 20 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Common Drain N-Channel 2.5V specified PowerTrench MOSFET
Dual N-Channel 2.5V Specified PowerTrench MOSFET
|
Glenair, Inc.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP443R IRFF430R IRF731R IRF732R IRFP442R IRFP342 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 500MA I(D) | TO-250VAR
Rugged Series Power MOSFETs - N-Channel
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.75A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7.7A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8.7A I(D) | TO-247AC
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 10A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.8A I(D) | TO-247 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6.8AI（四）|47
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.4A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 5.4AI（四）|04AA
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 4A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.25A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 2.25AI（四）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 1.35A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 1.35AI（四）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-204AA
|
International Rectifier, Corp.
Intersil, Corp.
Infineon Technologies AG
Fairchild Semiconductor, Corp.
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| FDS4435 FDS4435D84Z FDS4435F011 |
P-Channel Logic Level PowerTrenchTM MOSFET 8800 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
9000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
8.8 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| FDS4141 |
P-Channel PowerTrench? MOSFET -40V, -10.8A, 13.0mΩ
P-Channel PowerTrench㈢ MOSFET -40V, -10.8A, 13.0mヘ
-40V P-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel 10.8 A, 40 V, 0.013 ohm, P-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
|
| FDMS7650 |
30V N-Channel PowerTrench® MOSFET; 8-Power 56 (PQFN) 36 A, 30 V, 0.99 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel PowerTrench? MOSFET 30 V, 60 A, 0.99 mΩ
N-Channel PowerTrench垄莽 MOSFET 30 V, 60 A, 0.99 m楼?
|
Fairchild Semiconductor, Corp.
|
| STD2NB80 6424 STD2NB80T4 |
From old datasheet system
N-CHANNEL MOSFET
N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.9A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 1.9AI（四）|52AA
|
SGS Thomson Microelectronics
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| IRF9Z34-001PBF IRF9543-003PBF IRF9543-005PBF IRF95 |
18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET
16 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 80 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
9.7 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET
2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
2.1 A, 1000 V, 6.7 ohm, N-CHANNEL, Si, POWER, MOSFET
2.8 A, 800 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
19 A, 80 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET
7 A, 450 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET
1.7 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Vishay Intertechnology, Inc.
Intersil, Corp.
VISHAY INTERTECHNOLOGY INC
|
| STB6NB90 6439 |
N - CHANNEL 900V - 1.7 Ohm - 5.8A - D 2 PAK PowerMESH MOSFET
From old datasheet system
N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET
N-CHANNEL Power MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
ST Microelectronics
|
|
