| PART |
Description |
Maker |
| APT4012BVFR APT4012SVFR APT4012BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 37; RDS(on) (Ohms): 0.12; BVDSS (V): 400; 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
POWER MOS V FREDFET
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Microsemi, Corp.
Advanced Power Technology
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| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| APT7F120B APT7F120S |
N-Channel FREDFET 1200V, 7A, 2.90楼? Max, trr 隆?190ns
N-Channel FREDFET 1200V, 7A, 2.90Ω Max, trr ?90ns
|
Microsemi Corporation
|
| APT14F100S APT14F100B09 |
Power FREDFET; Package: D3 [S]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000; 14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel FREDFET
14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
Microsemi Corporation
MICROSEMI POWER PRODUCTS GROUP
|
| APT5015BVFR APT5015SVFR |
POWER MOS V FREDFET 功率MOS V FREDFET
|
Advanced Power Technology, Ltd.
|
| TC74VHC4053AFK TC74VHC4051AFT |
Loop detection; Vin (V) max.: 24; Icc (mA) max.: 6.45; Fmax (kHz) max.: 400; Topr [Tjopr] (°C): -40 to 125; Remarks: Power factor collection; Package: DIP; Pin count: 16
Synchronous phase shift full-bridge control IC ; Vin (V) max.: 20; Icc (mA) max.: 10; Fmax (kHz) max.: 2 MHz; Topr [Tjopr] (°C): -40 to 125; Remarks: Switching regulator; Package: TSSOP; Pin count: 20
|
Toshiba Corporation
|
| APT5010B2VR APT5010B2VRG |
POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
New T-MAX?Package (Clip-mounted TO-247 Package)
|
ADPOW[Advanced Power Technology]
Advanced Power Technolo...
|
| 3.0SMCJ5.0 3.0SMCJ5.0A 3.0SMCJ5.0C 3.0SMCJ5.0CA 3. |
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS 使用3000W表面贴装瞬态电压抑制器
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: RC Soft Switching Series 8-60 kHz; Package: TO-247; VCE (max): 1,200.0 V; IC(max) @ 25°: 30.0 A; IC(max) @ 100°: 15.0 A
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: RC Soft Switching Series 8-60 kHz; Package: TO-247; VCE (max): 1,200.0 V; IC(max) @ 25°: 30.0 A; IC(max) @ 100°: 15.0 A
|
PanJit International, Inc.
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
http://
|
| IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE)
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
| SST89C54-33-AC-NJ SST89C58-33-AC-NJ SST89C54-33-AI |
Voltage Regulator IC; Output Current:150mA; Output Voltage:3.3V; Package/Case:5-SOT-23; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:3.3V
Linear Voltage Regulator IC; Output Current Max:150mA; Supply Voltage Max:6V; Package/Case:5-SOT-23; Current Rating:150mA; Leaded Process Compatible:No; Output Voltage Max:5V; Peak Reflow Compatible (260 C):No
Replaced by PT78ST133 : 3.3Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85
Voltage Regulator IC; Output Current:150mA; Output Voltage:2.6V; Package/Case:5-SOT-23; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:2.6V
Linear Voltage Regulator IC; Package/Case:5-SOT-23; Current Rating:150mA; Leaded Process Compatible:No; Output Voltage Max:5V; Peak Reflow Compatible (260 C):No; Reel Quantity:3000; Voltage Regulator Type:Low Dropout (LDO) RoHS Compliant: No
Linear Voltage Regulator IC; Output Current Max:150mA; Supply Voltage Max:6V; Package/Case:5-SOT-23; Current Rating:150mA; Leaded Process Compatible:No; Output Voltage Max:2.85V; Peak Reflow Compatible (260 C):No
Linear Voltage Regulator IC; Output Current Max:150mA; Supply Voltage Max:6V; Package/Case:5-SOT-23; Current Rating:150mA; Leaded Process Compatible:No; Output Voltage Max:3V; Peak Reflow Compatible (260 C):No
Linear Voltage Regulator IC; Output Current Max:150mA; Supply Voltage Max:6V; Package/Case:5-SOT-23; Current Rating:150mA; Leaded Process Compatible:No; Output Voltage Max:1.8V; Peak Reflow Compatible (260 C):No
Voltage Regulator IC; Output Current:500mA; Output Voltage:1.215V; Package/Case:8-MLP33; Supply Voltage Max:6V; Current Rating:500mA; Leaded Process Compatible:No; Output Current Max:500mA; Output Voltage Max:1.215V
FlashFlex51 MCU FlashFlex51单片
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| PZTA44 PZTA44_4 PZTA44115 |
NPN high-voltage transistor - fT min: 20 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 1350 mW; VCEO max: 400 V; Package: SOT223 (SC-73); Container: Tape reel smd
From old datasheet system
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NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
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