| PART |
Description |
Maker |
| HVV1214-075 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200レs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| AM1214-100 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| AM1214-325 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
RF & Microwave Transistors L-Band Radar Applications(用于L波段雷达脉冲输出和驱动的RF和微波晶体管)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| AM81214-015 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
ST Microelectronics
|
| AM81214-006 AM81214-6 |
20NS, 44 PLCC, COM TEMP(EPLD)
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| AM1214-250 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
|
STMicroelectronics
ST Microelectronics
SGS Thomson Microelectronics
|
| 1214-550P |
550 Watts - 300楼矛s, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
550 Watts - 300μs, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| BLL1214-250 |
L-band radar LDMOS transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BLS6G2933S-13010 BLS6G2933S-130 BLS6G2933S-130112 |
LDMOS S-band radar power transistor
|
NXP Semiconductors N.V.
|
| BLS6G3135S-120 BLS6G3135-120 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
| BLS6G2731P-200 |
LDMOS S-Band radar pallet amplifier
|
NXP Semiconductors N.V.
|
