| PART |
Description |
Maker |
| TC1301 |
Low Noise and Medium Power GaAs FETs
|
Transcom, Inc.
|
| TC1101 |
Low Noise and Medium Power GaAs FETs 低噪声和中等功率GaAs场效应管
|
Electronic Theatre Controls, Inc.
|
| TC2381 |
Low Noise and Medium Power Packaged GaAs FETs
|
Transcom, Inc.
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| CHA2159 |
55-65GHz Low Noise / Medium Power Amplifier
|
United Monolithic Semiconductors
|
| CHA2157 CHA2157-99F_00 CHA215707 |
55-60GHz Low Noise / Medium Power Amplifier
|
United Monolithic Semiconductors
|
| LA6018N4220 LA4080N3520 LA4080N3523 LA4080N2820 LA |
Broadband Low Noise Medium Power Amplifiers
|
American Accurate Components, Inc.
|
| APM1855-P29-13 |
Low Noise and High OIP3 Medium Power Amplifier Module
|
Advanced Semiconductor ...
|
| CFS0103-SB08 CFS0103-SB-0G00 |
0.1-10.0 GHz Low Noise, Medium Power
X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
|
MIMIX BROADBAND INC
|
| PB-CFS0303-SB-00A0 PB-CFS0303-SB-00B0 PB-CFS0303-S |
0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package 0.1-10.0 GHz的低噪声，中等功率的表面贴装塑料包装pHEMT
|
Mimix Broadband, Inc.
|
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
