PART |
Description |
Maker |
3N206 3N204 3N205 |
Silicon dual insulated-gate field-effect transistor. Silicon Dual Insulated-Gate Field-Effect Transistors
|
General Electric Solid State GESS[GE Solid State]
|
3N187 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
|
Vaishali Semiconductor
|
3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
|
Intersil
|
MGS13002DD MGS13002D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGW12N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
|
ETC[ETC]
|
GT60M303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
Toshiba Semiconductor
|
GT10J321 GT10.321 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
GT20G101SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT5G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|