| PART |
Description |
Maker |
| 2SC5397 |
TRANSISTOR FOR LOW FREQUENCY AMPLIFY, MEDIAM FREQUENCY AMPLIFY SILICON NPN EPITAXIAL TYPE MICRO
|
Isahaya Electronics Cor...
|
| 2SC3351-T2B 2SC3351-T1B |
For amplify low noise and high frequency.
|
NEC
|
| 2SC561913 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC5634 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
ISAHAYA[Isahaya Electronics Corporation]
|
| 2SC5727 |
SMALL-SIGNAL TRANSISTOR FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC2954 2SC2954-T1 |
For amplify high frequency, low noise, and wide band.
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC
|
| INC6002AC1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN TRANSISTOR
|
Isahaya Electronics Corporation
|
| 2SJ14510 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE
|
Isahaya Electronics Corporation
|
| 2SK43310 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE
|
Isahaya Electronics Corporation
Isahaya Electronics Corpora...
|
| INC6006AS1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
Isahaya Electronics Cor...
|
| INC6008AP1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
