| PART |
Description |
Maker |
| MS1227 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| 2N2857 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| MRF581 MRF581A |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
New Jersey Semi-Conductor P...
|
| 2N4427 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
ADPOW[Advanced Power Technology]
|
| 2N5031 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
ADPOW[Advanced Power Technology]
|
| 2N6304 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
ADPOW[Advanced Power Technology]
|
| MS1261 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| MRF553 MSC1316 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
From old datasheet system
|
http://
MICROSEMI[Microsemi Corporation]
|
| MRF581 MRF581A MSC1318 |
From old datasheet system
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
| 2N5109 MSC1304 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
From old datasheet system
|
Microsemi Corporation
|
| 2SC5195 2SC5195-T1 2SC5195NE68819 |
Discrete
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 微波低噪声放大器NPN硅外延晶体管
|
NEC Corp.
NEC, Corp.
|
