| PART |
Description |
Maker |
| 2N3501CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
High Voltage Medium Power NPN Transistor In a Hermetically Sealed Cermic Surface Mount Package For High Reliability Application(高电压、中等功率、高可靠性、NPN晶体管（陶瓷表贴封装
|
SemeLAB
SEME-LAB[Seme LAB]
|
| 2N4240 |
NPN TRANSISTOR MEDIUM POWER HIGH VOLTAGE
|
Seme LAB
|
| 2N6211 2N6213 2N6212 |
MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS
|
BOCA[Boca Semiconductor Corporation]
|
| 2N6422 2N4240 2N6423 2N3583 2N3584 2N3585 2N6420 2 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS
|
Boca Semiconductor Corp...
BOCA[Boca Semiconductor Corporation]
|
| FS3UM-10 FS3UM |
Power MOSFETs: FS Series, Medium Voltage, 500V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| NCP1027 NCP1027P100G NCP1027P065G |
HIGH−VOLTAGE SWITCHER FOR MEDIUM POWER OFFLINE SMPS FEATURING LOW STANDBY POWER
|
ON Semiconductor
ONSEMI
|
| 2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
HIGH SPEED MEDIUM POWER NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
HIGH SPEED/ MEDIUM POWER/ NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
Supercapacitor; Capacitance:0.68F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin
|
Central Semiconductor Corp
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| TM55EZ-24 TM55EZ-2H TM55RZ-24 TM55RZ-2H |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RM20TPM-2H RM20TPM-24 |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCP54-10 BCP56-10 BCP56 |
NPN Medium Power Transistor
High collector current 1.3 W power dissipation. emitter-base voltage VEBO 5 V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| RM30CZ-2H RM30CZ-24 RM30DZ-24 RM30DZ-2H RM30DZ |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE 高压中功率常规使用绝缘型
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ZTX457 |
NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
|
Diodes Incorporated
Zetex Semiconductors
|
