| PART |
Description |
Maker |
| BGF1801-10 |
GSM1800 EDGE power module 1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BGY282 |
dual band UHF amplifier module for GSM900 and GSM1800
|
Philips Semiconductors
NXP Semiconductors
|
| NE5510279A-T1 NE5510279A |
3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
NEC Corp.
NEC[NEC]
CEL[California Eastern Labs]
|
| AWB7122P7 AWB7122P8 AWB7122P9 |
1805 MHz to 1880 MHz Small-Cell Power Amplifier Module
|
Skyworks Solutions Inc.
|
| BGF1901-10 |
GSM1900 EDGE power module
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| AWT6168 |
GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc.
|
| AWT6223R AWT6223RM26P8 AWT6223RM26P9 |
WCDMA/GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| PHL819-45 |
Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz
|
Tyco Electronics
|
| MHW1815D |
MHW1815 1805-1880 MHz, 15 W, 26 V, 32 dB RF Microwave Bipolar Power Amplifier - Archived
|
Motorola
|
| PXAC182002FC-V1 |
High Power RF LDMOS FET 180W, 28V, 1805 - 1880 MHz
|
Wolfspeed
|
| PTMC210124MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 12 W, 28 V, 1805 ?2200 MHz
|
Cree, Inc
|
| SKY77331 |
Power Amplifier Module with Integrated Coupler for Quad-Band GSM / EDGE
|
Skyworks Solutions Inc.
Skyworks Solutions, Inc.
|
