| PART |
Description |
Maker |
| 2N1047A |
GERMANIUM POWER TRANSISTORS
|
New Jersey Semiconductor
|
| Q60103-X151-D Q60103-X151-F1 Q60103-X151-G Q60103- |
24 V, 200 mA, PNP germanium transistor
PNP GERMANIUM TRANSISTORS 进步党锗晶体
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Siemens Semiconductor G...
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| Q60103-X152-D Q60103-X152-E Q60103-X152-F Q60103-X |
pnp germanium transistors pnp型锗晶体
CAP .0022UF 1600V METAL POLYPRO pnp型锗晶体
Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:37; Connector Shell Size:14; Connecting
24 V, PNP germanium transistor
20 V, PNP germanium transistor
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2N650 2N580 2N581 |
GERMANIUM PNPSMALL SIGNAL TRANSISTORS
|
New Jersey Semi-Conduct...
|
| 2N187 2N190 2N191 |
Alloy Junction Germanium Transistors
|
Semitronics
|
| OC70 OC71 OC72 OC77 OC73 OC75 OC74 OC76 OC78 |
(OC7x) Germanium Small Signal Transistors
|
GPD Optoelectronic Devices
|
| AA143 |
Gold Bonded Germanium Diodes 0.04 A, GERMANIUM, SIGNAL DIODE, DO-7
Gold Bonded Germanium Diodes
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2N3792 2N3789 2N3790 2N3791 |
POWER TRANSISTORS(10A/150W)
POWER TRANSISTORS(10A150W)
POWER TRANSISTORS(10A,150W)
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION
|
MOSPEC[Mospec Semiconductor]
|
| BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
|
NXP Semiconductors
|
| RTC6691 |
silicon-germanium (SiGe) power amplifier
|
RichWave
|
| 1N113 1N100 1N68 1N107 1N128 1N270JTXV 1N143 1502B |
100 V, 60 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
10 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES
12 V, 500 mA, gold bonded germanium diode
50 V, 500 mA, gold bonded germanium diode
75 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
125 V, 500 mA, gold bonded germanium diode
85 V, 500 mA, gold bonded germanium diode
30 V, 500 mA, gold bonded germanium diode
40 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC
BKC International Electronics
List of Unclassifed Man...
|
