| PART |
Description |
Maker |
| NE850R599A NE850R59 |
C-BAND MEDIUM POWER GaAs MESFET
|
California Eastern Labs
NEC
|
| NE6500379A-T1 NE6500379A |
3W, L/S-BAND MEDIUM POWER GaAs MESFET
|
Duracell
California Eastern Labs
|
| FLL351ME |
L-band medium & high power gaas FTEs
|
Fujitsu Component Limited.
Fujitsu Limited
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Microelectronics
|
| FLU10ZM |
L-Band Medium & High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLU17XM |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLL200IB-1 FLL200IB-3 |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
|
Eudyna Devices
|
| XP1022-QF-0N00 XP1022-QF-EV1 |
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17000 MHz - 25000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17.0-25.0千兆赫的GaAs MMIC功率放大器，QFN封装
|
Mimix Broadband, Inc.
|
| FLL2400IU-2C |
L-Band High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Fujitsu Limited
Sumitomo Electric Industries, Ltd.
|
| XP1019-BD08 XP1019-BD-000W |
17.0-24.0 GHz GaAs MMIC
17000 MHz - 24000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MIMIX BROADBAND INC
|
| Q62702G74 CGY191 |
From old datasheet system
GaAs MMIC (Dual mode power amplifier for CDMA /TDMA portable cellular phones) 1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
http://
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
