PART |
Description |
Maker |
SHB636053E |
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE 5 A, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
Sensitron Semiconductor
|
SHD619112P |
HERMETIC SILICON CARBIDE RECTIFIER 10 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
STPSC606 STPSC606D STPSC606G-TR |
6 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC 600 V power Schottky silicon carbide diode
|
STMicroelectronics
|
SHD620150P |
HERMETIC SILICON CARBIDE RECTIFIER 20 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
BF421 BF423 Q62702-F496 Q62702-F532 |
PNP Silicon Transistors With High Reverse Voltage PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
Q62702-F722 BFP23 BFP26 Q62702-F622 |
PNP Silicon Transistor with high Reve... From old datasheet system PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
SDP10S30 SDB10S30SMD SDT10S30 |
Silicon Carbide Schottky Diodes - 10A diode in TO220-3 package Silicon Carbide Schottky Diodes - 10A diode in TO263 package Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon
|
BF623 Q62702-F1053 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
CPMF-1200-S160B |
Silicon Carbide MOSFET
|
CREE
|
NXPSC08650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|