| PART |
Description |
Maker |
| FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET
L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| NE850010000 NE8500199 NE8500100 |
C-BAND MEDIUM POWER GaAs MESFET
|
California Eastern Labs
NEC[NEC]
|
| NE6500379A-T1 NE6500379A |
3W, L/S-BAND MEDIUM POWER GaAs MESFET
|
Duracell
California Eastern Labs
|
| NE9000 NE900000 NE900000G NE900075 NE900089A NE900 |
Ku-BAND MEDIUM POWER GaAs MESFET
|
NEC
|
| NE650107700 |
L/S BAND MEDIUM POWER GaAs MESFET
|
California Eastern Labs
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET
|
Fujitsu Media Devices Limited
|
| FLL600IQ-3 |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLL57MK |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| CFK2062-P3 CFK2062-P3-000T |
1.8 to 2.0 GHz 30 dBm Power GaAs FET 1800 MHz - 2000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
SIEMENS AG
Mimix Broadband, Inc.
|
| FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
