| PART |
Description |
Maker |
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| AT-38086 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor(4.8 V NPN 硅双极型普通射极晶体管)
|
Agilent(Hewlett-Packard)
|
| BFS17S |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFS17W) for broadband amplifiers
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| 3DG3020A1 |
Silicon NPN bipolar transistor
|
Huajing
|
| BFS360L6 |
2 CHANNEL, S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz
|
INFINEON TECHNOLOGIES AG
|
| 13003DEL-X-T60-F-K 13003DEL-X-T92-A-B 13003DEL-X-T |
SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS
|
Unisonic Technologies
|
| 13003BSG-T92-F-B 13003BSG-T60-F-K 13003BSG-T92-F-K |
NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION
|
Unisonic Technologies
|
| 13003ADAG-T60-F-K 13003ADAG-T92-F-B 13003ADAG-T92- |
NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION
|
Unisonic Technologies
|
| TTC012 |
Bipolar Transistors Silicon NPN Triple-Diffused Type
|
Toshiba Semiconductor
|
| 13003ADA 13003ADAG-T92-B 13003ADAG-T92-K 13003ADAL |
NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION
|
Unisonic Technologies
|
| MP4T324335 MP4T3243 MP4T324300 MP4T324333 |
Bipolar High fT Low Voltage NPN Silicon Transistors
|
MPLUSE[M-pulse Microwave Inc.]
|
| MJH16002A MJH16004 |
Bipolar Junction Transistor
NPN SILICON POWER TRANSISTORS
|
New Jersey Semiconductors
New Jersey Semi-Conductor P...
|
