| PART |
Description |
Maker |
| 1SS391 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS396 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| KDR784 |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| HN2S01FU E001995 |
From old datasheet system
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| HRB0103B |
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying
|
Renesas Electronics Corporation
|
| HRB0103A |
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching, Rectifying
|
Renesas Electronics Corporation
|
| 1SS294 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching
|
TOSHIBA
|
| 1SS391 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching
|
TOSHIBA
|
| HN2S01FU |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application
|
TOSHIBA
|
| Q67040-A4230-A2 BUP603D BUP603-D |
IGBT Duopack (IGBT with Antiparallel ...
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
From old datasheet system
|
Infineon
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
