| PART |
Description |
Maker |
| NE3210S01 NE3210S01-T1 NE3210S01-T1B |
Low Noise Amplifier N-Channel HJ-FET(低噪声N沟道结型场效应管) 低噪声放大器N沟道黄建忠场效应管（低噪沟道结型场效应管
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE3210S01 NE3210S01-T1 NE3210S01-T1B |
SUPER LOW NOISE HJ FET
|
California Eastern Labs
|
| NE334S01 NE334S01-T1 NE334S01-T1B |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET C波段超低噪声放大器N沟道黄建忠场效应
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE350184C NE350184C-T1A NE350184C-T1 NE350184C-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs
CEL
|
| ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| NE321000 NE321000- |
TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 15MA I(DSS) | CHIP 晶体管|场效应| N沟道| 4V五（巴西）直| 15mA的我（直）|芯片
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
NEC, Corp.
NEC[NEC]
|
| 2SC5436 |
NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
|
http://
NEC[NEC]
NEC Corp.
|
| FHX76LP |
Super Low Noise HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| FHC40LG |
Super Low Noise HEMT
|
EUDYNA[Eudyna Devices Inc]
|
