| PART |
Description |
Maker |
| IRFW510A IRFI510ATU IRFW510ATM IRFI510A |
N-CHANNEL POWER MOSFET
100V N-Channel A-FET / Substitute of IRFI510
Advanced Power MOSFET 5.6 A, 100 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
|
| IRFIZ24NPBF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRFI1010NPBF IRFI1010NPBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRFPS3810PBF IRFPS3810PBF-15 |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRLM110A IRLM110ATF |
N-CHANNEL MOSFET
HEXFET Power MOSFET
Advanced Power MOSFET
100V N-Channel Logic Level A-FET
|
International Rectifier
FAIRCHILD[Fairchild Semiconductor]
|
| SSP6N80A SSP6N80AJ69Z |
6 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
Advanced Power MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRLI3705NPBF IRLI3705NPBF-15 |
HEXFET?Power MOSFET
HEXFET㈢Power MOSFET
ADVANCED PROCESS TECHNOLOGY
|
International Rectifier
|
| IRFS150A |
TRANSISTOR|MOSFET|N-CHANNEL|100VV(BR)DSS|31AI(D)|TO-247VAR
Advanced Power MOSFET
|
Fairchild Semiconductor
|
| IRF610A |
Advanced Power MOSFET
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为200V，导通电阻为1.5Ω，漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRLWI630A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRLWI510A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
