| PART |
Description |
Maker |
| MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
| MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP50N06EL MTP50N06 |
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| MTP3N120E |
TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM
|
Motorola, Inc.
|
| MTW32N25E MTW32N25 |
TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MTP7N20E |
TMOS POWER FET 7.0 AMPERES 200 VOLTS RDS(on) = 0.70 OHMS
|
Fairchild Semiconductor
Motorola, Inc
|
| MTD2955V |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM
|
MOTOROLA[Motorola, Inc]
|
| MTD3055V MTD3055V_D ON2501 |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM
From old datasheet system
|
MOTOROLA INC
ON Semi
MOTOROLA[Motorola, Inc]
|
