| PART |
Description |
Maker |
| IRFP460APBF |
SMPS MOSFET ( VDSS=500V , RDS(on)max=0.27Ω , ID=20A )
SMPS MOSFET ( VDSS=500V , RDS(on)max=0.27ヘ , ID=20A )
|
International Rectifier
|
| IRFSL31N20D IRFB31N20D IRFS31N20D IRFB31N20 |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A)
SMPS MOSFET
|
IRF[International Rectifier]
|
| IRFB23N15D IRFSL23N15D |
Power MOSFET(Vdss=150V/ Rds(on)max=0.090ohm/ Id=23A)
150V,23A,SMPS MOSFET for High frequency DC-DC converters(150V,23A,开关电MOS场效应管，用于高DC-DC变换 50V3A条，开关电源的MOSFET的高频率DC - DC转换器（50V3A条，开关电源马鞍山场效应管，用于高频的DC - DC变换器）
|
International Rectifier, Corp.
|
| IRF6217PBF IRF6217TRPBF IRF6217PBF-15 |
Reset Switch for Active Clamp Reset DC to DC converters
SMPS MOSFET HEXFET?Power MOSFET
SMPS MOSFET HEXFET㈢Power MOSFET
|
International Rectifier
|
| IRF1407L IRF1407S IRF1407STRR |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五（巴西）直| 100号A（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFIZ48G IRFIZ48 IRFIZ48GPBF |
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=39A)
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) 功率MOSFET（减振钢板基本\u003d 60V的，的Rdson）\u003d 0.018ohm，身份证\u003d 37A条）
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FDH27N50 |
27A/ 500V/ 0.19 Ohm/ N-Channel SMPS Power MOSFET
Discrete Commercial N-Channel SMPS Power MOSFET, 500V, 27A, 0.19 Ohms @ VGS = 10V, TO-247 Package
27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| SSG4512CE SSG4512CE-15 |
N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
| S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
| IRFI1010N IRFI1010 |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A)
Power MOSFET(Vdss=55V Rds(on)=0.012ohm Id=49A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A)
|
IRF[International Rectifier]
|
