| PART |
Description |
Maker |
| BFG11 BFG11_X BFG11X BFG11/X |
NPN 2 GHz RF power transistor(NPN 2 GHz 射频功率晶体
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BFG11X BFG11 BFG11/T1 BFG11/X |
NPN 2 GHz RF power transistor
TRANSISTOR NPN HF
|
Philips
|
| BFG403W BFG403W-2015 |
From old datasheet system
TRANSISTOR,BJT,NPN,4.5V V(BR)CEO,3.6MA I(C),SOT-343R
NPN 17 GHz wideband transistor
|
Quanzhou Jinmei Electro...
Philips Semiconductors
|
| 2N6132 2N6101 2N6491 2N6486 2N6487 2N6489 2N6099 2 |
NPN SILICON TRANSISTOR
NPN SILICON TRANSISTOR 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
(2N6130 - 2N6134) NPN SILICON TRANSISTOR
Leaded Power Transistor General Purpose
Leaded Power Transistor Darlington
|
http://
ON Semiconductor
Central Semiconductor Corp.
Advanced Semiconductor
CENTRAL[Central Semiconductor Corp]
Central Semiconductor C...
|
| BFG198 |
NPN 8GHz wideband transistor(NPN 8G赫兹 宽带晶体
NPN 8 GHz wideband transistor
|
NXP
Philips Semiconductors
|
| BFS540 BFS54000 |
NPN 9 GHz wideband transistor
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
|
NXP Semiconductors
Philips Semiconductors
|
| UPA1476 UPA1476H |
2 A, 115 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
|
NEC Corp.
NEC[NEC]
|
| MJL4302A MJL4281A |
Complementary NPN-PNP Silicon Power Bipolar Transistors 15 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-264AA
From old datasheet system
POWER TRANSISTOR, NPN
350V Audio Transistor, PNP
350V Audio Transistor, NPN
|
ON Semiconductor
ONSEMI
|
| MS3023 |
2.0 GHz, Class C, Common Base; fO (MHz): 0; P(out) (W): 3; P(in) (W): 0.5; Gain (dB): 7.8; Vcc (V): 28; Cob (pF): 9.5; Case Style: M210 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| 2N6676 JANTX2N6693 JAN2N6676 JAN2N6678 JAN2N6691 J |
NPN Transistor
From old datasheet system
NPN POWER SILICON TRANSISTOR 15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-61
|
MICROSEMI[Microsemi Corporation]
http://
Microsemi, Corp.
|
