| PART |
Description |
Maker |
| BC817-16 BC817-40 BC817-25 |
0.3 Watts NPN Plastic-Encapsulate Transistors
|
Taiwan Semiconductor Company, Ltd
|
| MMBT3906 |
30.3 Watts PNP Plastic-Encapsulate Transistors
|
Taiwan Semiconductor Company, Ltd
|
| BC857A BC857C BC856B BC857B BC858B BC858C BC856A B |
0.2 Watts PNP Plastic-Encapsulate Transistors
|
Taiwan Semiconductor Company, Ltd
|
| BUT33 |
RP20 (F) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 3.3V; 2:1 Wide Input Voltage Range; 20 Watts
POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84%
56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS
|
Motorola Inc
Motorola, Inc.
ONSEMI[ON Semiconductor]
|
| MSD601-RT1G MSD601-RT1-D |
Small Signal Plastic NPN
NPN General Purpose Amplifier Transistors Surface Mount
|
ON Semiconductor
|
| BC846S |
Plastic-Encapsulate Multi-Chip (NPN NPN) Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| MJE2361T MJE2360T |
0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| 25LC080A-I/MS 25AA080A-I/MS 25LC080BT-I/P 25AA080B |
8K SPI Bus Serial EEPROM 8K的SPI总线串行EEPROM
ISOLATOR OPTICALLY COUPLED 125MA 8K的SPI总线串行EEPROM
LED IR 5MM 890NM PLASTIC 8K的SPI总线串行EEPROM
LED IR 3MM 890NM PLASTIC 8K的SPI总线串行EEPROM
LED IR 3MM 935NM PLASTIC 8K的SPI总线串行EEPROM
PHOTOTRANS NPN 935NM PLCC SMD 8K的SPI总线串行EEPROM
RF Cable Assembly; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes 8KSPI总线串行EEPROM
SWITCH SLOTTED OPTICAL WIDE GAP
LED FIBER OPTIC GAALAS
PHOTODIODE FBR-OPT HS PIN (AT&T)
LED IR 890NM PLASTIC SIDELOOK
LED IR 3MM 935NM FLAT PLASTIC
LED IR 890NM HERMETIC PILL PAK
LED IR 890NM HERMETIC FLAT TO-46
Light-Management IC with Efficient 1x/1.5x/2x Charge Pump for Backlight/Flash/RGB LEDs
MINIGRABBER/BANANA PLUG (YELLOW) RoHS Compliant: Yes
LED IR 890NM PLSTC NARROW TO-46
PHOTO DARLINGTON NPN 15V 850NM
PHOTOTRANSISTOR IR 3MM 935NM NPN
SWITCH TRANSISTOR SLOTTD OPTICAL
SENSOR SWITCH SLOTTED OPTICAL
DIODE INFRARED EMITTING PLASTIC
|
Microchip Technology, Inc.
Microchip Technology Inc.
|
| BU406 |
7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS
|
Motorola, Inc
ON Semiconductor
|
| MJE521 ON2038 |
4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS
From old datasheet system
|
ON
MOTOROLA[Motorola, Inc]
|
| CD9011 CD9011D CD9011E CD9011F CD9011G CD9011H CD9 |
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 273 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 44 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 40 - 59 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 54 - 80 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 72 - 108 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 97 - 146 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 132 - 198 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 182 - 273 hFE
|
Continental Device India Limited
|
