| PART |
Description |
Maker |
| LC338128M LC338128P LC338128PL LC338128M-80 LC3381 |
1 MEG (131072 words x 8 bit) pseudo-SRAM
1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| HY64LD16322M-DF85I HY64LD16322M-DF85E |
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC
x16|2.5(VDD)2.5(VDDQ)V|85|Pseudo SRAM - 32M x16 | 2.5（VDD）在2.5（提供VDDQ）V | 85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| EM565168 EM565168BC-55_55G EM565168BC-70_70G EM565 |
512K x 16 Pseudo SRAM
|
http://
Etron Technology, Inc.
|
| M74DW66500B |
2x 64Mbit Flash Memory and 32Mbit Pseudo SRAM
|
ST Microelectronics
|
| UPD42832GU-12L UPD42832GU-15L UPD42832C-12L |
18-Mbit DDR-II SRAM 2-Word Burst Architecture
x8 Pseudo-Static RAM x8伪静态存储器
|
Picker Components
|
| M74DW66500B90ZT M74DW66500B M74DW66500B70ZT |
2x 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 32Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| W963A6BBN W963A6BBN80I W963A6BBN70 W963A6BBN70E W9 |
Low Power Mobile Products
512K WORD X 16 BIT LOW POWER PSEUDO SRAM
|
WINBOND[Winbond]
Winbond Electronics
|
| AM50DL128CG85IS AM50DL128CG85IT AM50DL128CG70IS AM |
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 64 Mbit (4 M x 16-Bit) Pseudo Static RAM
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
AMD[Advanced Micro Devices]
SPANSION[SPANSION]
|
| MSM548128BL MSM548128BL-70GS-K MSM548128BL-80GS-K |
128K X 8 PSEUDO STATIC RAM, 80 ns, PDSO32
128K X 8 PSEUDO STATIC RAM, 70 ns, PDSO32
From old datasheet system
131,072-Word x 8-Bit High-Speed PSRAM
|
OKI ELECTRIC INDUSTRY CO LTD
|
| IS32WV10008ALL-85BI IS32WV10008ALL-70TI IS32WV1000 |
1M X 8 PSEUDO STATIC RAM, 85 ns, PBGA48
1M X 8 PSEUDO STATIC RAM, 70 ns, PDSO44
1M X 8 PSEUDO STATIC RAM, 85 ns, PDSO44
1M X 8 PSEUDO STATIC RAM, 100 ns, PBGA48
|
INTEGRATED SILICON SOLUTION INC
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| M24L416256SA-60BEG M24L416256SA-60BIG M24L416256SA |
4-Mbit (256K x 16) Pseudo Static RAM
256K X 16 PSEUDO STATIC RAM, 60 ns, PDSO44
|
Elite Semiconductor Mem...
Elite Semiconductor Memory Technology Inc.
|
