PART |
Description |
Maker |
AP55T06GS-HF AP55T06GS-HF-14 |
Simple Drive Requirement, Lower On-resistance
|
Advanced Power Electron...
|
AP4455GEH-HF AP4455GEH-HF14 |
Simple Drive Requirement, Lower On-resistance
|
Advanced Power Electronics Corp.
|
AP90T03GJ AP90T03GH AP90T03GH14 |
Lower On- resistance, Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
AP6679GP-A |
Lower On-resistance, Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
AP6679GSP-HF AP6679GSP-HF-14 |
Lower On-resistance, Simple Drive Requirement
|
Advanced Power Electronics Corp. Advanced Power Electron...
|
AP9562GP-HF |
Lower On-resistance, Simple Drive Requirement, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
AP30T03GH-HF AP30T03GH-HF-14 |
Lower Gate Charge Lower Gate Charge 17 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Simple Drive Requirement
|
Advanced Power Electronics Corp. Advanced Power Electron...
|
K7N803601B K7N803649B-QC25 DS_K7N803601B K7M801825 |
512Kx36 & 1Mx18 Pipelined NtRAM 256Kx36 & 512Kx18-Bit Flow Through NtRAM 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes 256Kx36 & 512Kx18-Bit Pipelined NtRAM 256Kx36
|
http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
CS8129-D CS8129YTVA5 CS8129/D |
5V750mA Low Dropout LinearRegulator with Lower RESETbar Threshold 5V, 750mA Low Dropout Linear Regulator with Lower RESETbar Threshold 5.0 V, 750 mA Low Dropout Linear Regulator with Lower RESET Threshold
|
ON Semiconductor
|
IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 60 V, 0.023 ohm, N-CHANNE 81 A, 60 V, 0.012 ohm, N-CHANNE 27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. VISHAY INTERTECHNOLOGY INC
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