| PART |
Description |
Maker |
| MFE960 MFE990 |
N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTO
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| C2M0045170P |
Silicon Carbide Power MOSFET C2M MOSFET Technology
|
Cree, Inc
|
| C3M0030090K |
Silicon Carbide Power MOSFET C3M MOSFET Technology
|
Cree, Inc
|
| FMC05N50E |
N-CHANNEL SILICON POWER MOSFET
5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET T-PACK(S), 3 PIN
|
Fuji Electric Holdings Co., Ltd.
|
| C2M0080120D |
Silicon Carbide Power MOSFET Z-FETTM MOSFET
|
Cree, Inc
|
| 2SK3610-01 |
N-CHANNEL SILICON POWER MOSFET
10 A, 250 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI ELECTRIC CO LTD
|
| 2SK3515 2SK3515-01 2SK3515-01MR |
N CHANNEL SILICON POWER MOSFET 8 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 2SK1008-01 |
4.5 A, 500 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL SILICON POWER MOSFET
|
FUJI[Fuji Electric]
|
| 2SK3597-01 |
POWER MOSFET N-CHANNEL SILICON POWER MOSFET
|
Fuji Electric
SANYO[Sanyo Semicon Device]
|
| IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
175°C Operating Temperature
|
International Rectifier
|
| 2SK3513-01L 2SK3513-01S 2SK3513-01SJ |
N-CHANNEL SILICON POWER MOSFET 12 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
|
| 2SK3556-01S 2SK3556 2SK3556-01L 2SK3556-01SJ |
N-CHANNEL SILICON POWER MOSFET 37 A, 250 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
|
|
