| PART |
Description |
Maker |
| PS21342-N |
DIP - IPM
MITSUBISHI SEMICONDUCTOR Power Module TRANSFER-MOLD TYPE INSULATED TYPE
MITSUBISHI SEMICONDUCTOR TRANSFER-MOLD TYPE INSULATED TYPE
Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| PS21963-EST09 PS21963-EST |
Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| PS21963-ST09 |
Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| PS21993-4 PS21993-4A PS21993-4C PS21993-4W |
Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| PS21312 |
Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| PS51259-A |
TRANSFER-MOLD TYPE INSULATED TYPE
Single phase AC input, DC output IGBT/FWD converter
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MN103SD0Q MN103SFD0R |
Transfer mode: Word transfer. Burst transfer. Intermittent transfer
|
Panasonic Semiconductor
|
| RPI-221 |
Sensors > Photointerrupters > Linear Phototransistor output
Photointerrupter, double-layer mold type
Photointerrupter/ double-layer mold type
|
Rohm CO.,LTD.
|
| BCR20B BCR20E BCR20A BCR20C |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Semiconductor
|
| BCR16B BCR16C BCR16E |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
|
