| PART |
Description |
Maker |
| QM3001K |
P-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
TY Semiconductor Co., Ltd
|
| ME2302A29T |
High-density cell design for ultra low on-resistance
|
SUNMATE electronic Co.,...
|
| LG50N10 |
High density cell design for ultra low Rdson
|
Shenzhen Luguang Electr...
|
| LPM9029C |
Super high density cell design
|
Lowpower Semiconductor ...
|
| QL3060-0PB456C QL3060-1PB456M QL3060-1PB456C QL306 |
60,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.
FPGA|1584-CELL|CMOS|QFP|208PIN|PLASTIC FPGA的| 1584细胞|的CMOS | QFP封装| 208PIN |塑料
FPGA|1584-CELL|CMOS|BGA|456PIN|PLASTIC
|
QuickLogic, Corp.
|
| WPM2026 WPM2026-3 WPM2026-3TR |
Single P-Channel, -20V, -3.2A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
| LS17500 |
3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density A-size bobbin cell
|
SAFT
|
| STN4850 |
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4426 |
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
