| PART |
Description |
Maker |
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| NTTD1P02R2-D NTTD1P02R2/D |
Power MOSFET -1.45 Amps-20 Volts
Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8 Package
|
ON Semiconductor
|
| NTB45N06LT4 NTB45N06LT4G NTP45N06L NTB45N06L NTB45 |
Power MOSFET 45 Amps, 60 Volts, Logic Level
45 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D2PAK
|
ONSEMI[ON Semiconductor]
|
| NTD32N06L NTD32N06LT4 NTD32N06L-1 NTD32N06LT4G NTD |
Power MOSFET 32 Amps, 60 Volts, Logic Level(N−Channel DPAK)
Power MOSFET 32 Amps, 60 Volts, Logic Level(N-Channel DPAK)
Power MOSFET 32 Amps / 60 Volts / Logic Level(N-Channel DPAK)
Power MOSFET 32 Amps, 60 Volts, Logic Level N-Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| MTW32N20E MTW32N20E-D |
Power MOSFET 32 Amps, 200 Volts N-Channel TO-247
Power MOSFET 32 Amps, 200 Volts(32A,200V的功率MOSFET)
|
ON Semiconductor
|
| NTD4302 NTD4302T4 NTD4302-1 |
Power MOSFET 68 Amps / 30 Volts(N-Channel DPAK)
Power MOSFET 68 Amps, 30 Volts(N−Channel DPAK)
Power MOSFET 68 Amps, 30 Volts(N-Channel DPAK)
|
ONSEMI[ON Semiconductor]
|
| 50N06-TF3-T 50N06L-X-TA3-T 50N06L-X-TF3-T 50N06-TA |
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
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友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| 2N7002L-AE2-R 2N7002G-AE2-R |
0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 12N06L-TN3-R 12N06G-TN3-R |
12 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MMSF7P03HD-D |
Power MOSFET 7 Amps, 30 Volts P-Channel SO-8
|
ON Semiconductor
|
| MMSF7N03HD-D |
Power MOSFET 7 Amps, 30 Volts N-Channel SO-8
|
ON Semiconductor
|
