| PART |
Description |
Maker |
| AM29845AJC AM29845A/BLA AM29845ADMB AM29845APC AM2 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30K with Standard Packaging
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50K with Standard Packaging
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC40U with Standard Packaging
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package; Similar to IRG4PC40K with Lead Free Packaging
1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package; A IRGPS40B120U with Standard Packaging
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50U with Standard Packaging
1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package; A IRG4PSH71U with Standard Packaging
1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package; A IRG4BH20K-S with Standard Packaging
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50F with Standard Packaging
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50U with Standard Packaging
10-Bit D-Type Latch
600V Warp 60-150 kHz Discrete IGBT in a TO-262 package; A IRG4BC40WL with Standard Packaging 8位D型锁存器
8-Bit D-Type Latch 8位D型锁存器
|
Bourns, Inc.
|
| X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| SGB07N120 SGP07N120 |
Fast IGBT in NPT-technology
IGBTs & DuoPacks - 7A 1200V TO263AB SMD IGBT
IGBTs & DuoPacks - 7A 1200V TO 220AB IGBT
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| HGT1S10N12 HGT1S10N120BNS HGTP10N120BN HGTG10N120B |
From old datasheet system
35A 1200V NPT Series N-Channel IGBT
35A/ 1200V/ NPT Series N-Channel IGBT
36 MACROCELL 3.3 VOLT ISP CPLD 35 A, 1200 V, N-CHANNEL IGBT, TO-247
35A, 1200V, NPT Series N-Channel IGBT 35 A, 1200 V, N-CHANNEL IGBT
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| SGB02N60 SGP02N60 Q67040-S4504 Q67040-S4505 Q67041 |
FAST IGBT IN NPT TECHNOLOGY 快速IGBT技术在不扩散核武器条约
IGBTs & DuoPacks - 2A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 2A 600V TO 252AA SMD IGBT
IGBTs & DuoPacks - 2A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
| HGT1S12N60A4S HGTG12N60A4 HGTP12N60A4 FN4656 HGT1S |
600V, SMPS Series N-Channel IGBT
From old datasheet system
600V/ SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V, SMPS Series N-Channel IGBT 54 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
Fairchild Semiconductor, Corp.
|
| HGTP2N120BND HGT1S2N120BNDS HGT1S2N120BNDS9A |
12A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(12A, 1200V, NPT系列N沟道绝缘栅双极型晶体
72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN 2 A, 1200 V, N-CHANNEL IGBT, TO-220AB
12 A, 1200 V, N-CHANNEL IGBT, TO-263AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 6MBP75RJ120 |
IGBT IPM R-series 1200V class 1200V / 75A 6 in one-package
|
Fuji Electric
ETC
List of Unclassifed Manufacturers
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| IRG4RC10KD IRG4RC10 IRG4RC10KDTRR |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 5A条一（c）|52AA
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 2MBI75S 2MBI75S-120 |
IGBT MODULE ( S-Series ) 2-Pack IGBT 1200V 2X75A IGBT模块S系列，包IGBT200X75A
5-Pin, Multiple-Input, Programmable Reset ICs 100 A, 1200 V, N-CHANNEL IGBT
|
http://
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| IRGS30B60 IRGSL30B60K IRGS30B60K IRGB30B60K |
600V UltraFast 10-30 kHz IGBT in a TO-262 package
600V UltraFast 10-30 kHz IGBT in a D2-Pak package
600V UltraFast 10-30 kHz IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
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