| PART |
Description |
Maker |
| CHF3523CNT500LX CHF3523CNT500LY CHF3523CNT500LZ CH |
150 W Power RF Chip Termination
|
BOURNS[Bourns Electronic Solutions]
|
| MJE15030 MJE15031 MJE15029 MJE15028 ON2012 |
8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS 8 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-220AB
From old datasheet system
SEMICONDUCTOR TECHNICAL DATA
|
MOTOROLA INC
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| MTP29N15E |
TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
|
| MTD6N15 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount(功率场效应晶体管) 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| MJH11020 |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS
|
Motorola, Inc
|
| NTB35N15T4 |
Power MOSFET 37 Amps, 150 Volts; Package: D2PAK 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 800 37 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| MTW26N15E ON2689 |
TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHM 26 A, 150 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| MBR30H150CTG MBRF30H150CTG |
SWITCHMODE Power Rectifier 150 V, 30 A
SWITCHMODE垄芒 Power Rectifier 150 V, 30 A
|
ON Semiconductor
|
| HSMN-C110 HSMN-C150 HSMN-C170 HSMN-C190 HSMN-C191 |
(HSMx-C110/170/190/191/150) SMT Chip LED
|
Agilent Technologies
|
| IRF9643-001PBF IRF9643-003PBF IRF9643-005PBF IRF96 |
9 A, 150 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET
8.7 A, 350 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
1.75 A, 150 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET
1.75 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET
27 A, 100 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 150 V, 2.4 ohm, P-CHANNEL, Si, POWER, MOSFET
2.5 A, 100 V, 1.6 ohm, P-CHANNEL, Si, POWER, MOSFET
3.5 A, 150 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
11 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
|
VISHAY INTERTECHNOLOGY INC
|
| OP07D OP07DN OP07DR-REEL OP07DR-REEL7 OP07DR OP07D |
Ultralow Offset Voltage Operational Amplifier; Package: SOIC 150 MIL; No of Pins: 8; Temperature Range: Industrial OP-AMP, 350 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, PDSO8
150 μV Maximum Offset Voltage Op Amp
150 渭V Maximum Offset Voltage Op Amp
150 レV Maximum Offset Voltage Op Amp
|
Analog Devices, Inc.
|
| RFD3055 RFD3055SM RFP3055 FN3648 |
12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
12A 60V 0.150 Ohm N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
|
