| PART |
Description |
Maker |
| HYM71V16635HCLT8P-H HYM71V16635HCLT8P-K HYM71V1663 |
SDRAM|16MX64|CMOS|DIMM|168PIN|PLASTIC 内存| 16MX64 |的CMOS |内存| 168线|塑料
16Mx64|3.3V|K/H|x8|SDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
| HYMD116645BL8-K HYMD116645BL8-L HYMD116645BL8-M HY |
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX64|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 16MX64 |的CMOS |内存| 184PIN |塑料
16Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
http://
|
| W3DG6418V10AD1 W3DG6418V7AD1 W3DG6418V75AD1 W3DG64 |
128MB - 16Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3DG6417V7D2 W3DG6417V10D2 W3DG6417V75D2 W3DG6417V |
128MB - 16Mx64, SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| WED3EG6417S202D4 WED3EG6417S265D4 WED3EG6417S262D4 |
128MB - 16Mx64 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| HYS72D64320HU-6-C HYS64D16301GU5C HYS64D16301GU-5- |
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank
184-Pin Unbuffered Double Data Rate SDRAM
|
INFINEON[Infineon Technologies AG]
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M366S1654CTS-C7A M366S1654CTS-L1L M366S1654CTS-C7C |
16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM的内存在16Mx16显示BanksK的刷新，3.3V的同步DRAM的社民党
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| GMM26416233ENTG |
16Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| MT48LC4M32B2P-6G MT48LC4M32B2F51 MT48LC4M32B2B5-6G |
SDR SDRAM
128Mb: x32 SDRAM MT48LC4M32B2 ?1 Meg x 32 x 4 Banks
|
Micron Technology
|
| KMM366S1623AT-G8 KMM366S1623AT KMM366S1623AT-G0 KM |
16M x 64 SDRAM DIMM
16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY5V22GF-H HY5V22GF-P |
SDRAM - 128Mb
|
Hynix Semiconductor
|
