| PART |
Description |
Maker |
| WMS512K8LV-100CME WMS512K8LV-85CME WMS512K8LV-85CM |
512Kx8 MONOLITHIC SRAM
|
WEDC[White Electronic Designs Corporation]
|
| KM684000B KM684000BL KM684000BLG-5 KM684000BLG-5L |
512K X 8 STANDARD SRAM, 70 ns, PDIP32
512Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| AT29LV040ANBSP AT29LV040A-15JC AT29LV040A-15TC |
EEPROM|FLASH|512KX8|CMOS|TSSOP|32PIN|PLASTIC 的EEPROM | FLASH动画| 512KX8 |的CMOS | TSSOP封装| 32脚|塑料
EEPROM|FLASH|512KX8|CMOS|LDCC|32PIN|PLASTIC 的EEPROM | FLASH动画| 512KX8 |的CMOS | LDCC | 32脚|塑料
4M bit, 3-Volt Read and 3-Volt Write Flash
|
Atmel, Corp.
Atmel Corp
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| IS61LV5128-10 IS61LV5128-10B IS61LV5128-10BI IS61L |
IC,SRAM,512KX8,CMOS,TSOP,44PIN,PLASTIC
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PBGA36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PBGA36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
|
ISSI[Integrated Silicon Solution, Inc]
ISSI [Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| HY62256A HY62256AJ HY62256AJ-I HY62256ALJ HY62256A |
32Kx8bit CMOS SRAM, standby current=25uA, 70ns
32Kx8bit CMOS SRAM, standby current=25uA, 55ns
32Kx8bit CMOS SRAM, standby current=25uA, 85ns
32Kx8bit CMOS SRAM, standby current=100uA, 70ns
32Kx8bit CMOS SRAM, standby current=100uA, 85ns
32Kx8bit CMOS SRAM, standby current=1mA, 70ns
32Kx8bit CMOS SRAM, standby current=1mA, 85ns
32Kx8bit CMOS SRAM, standby current=1mA, 55ns
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
Circular Connector; No. of Contacts:22; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 32Kx8bit CMOS SRAM
JT 22C 22#22D SKT RECP
32Kx8bit CMOS SRAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
ETC
HYNIX[Hynix Semiconductor]
http://
|
| MSM832T MSM832S MSM832V MSM832W |
(MSM832x) 32K x 8 Monolithic CMOS SRAM
|
Hybrid Memory Products
|
| PS-AT65609EHW |
MICROCIRCUIT, DIGITAL, MEMORY, 8K x 8-Bit, 5V Very Low Power CMOS SRAM, MONOLITHIC SILICON
|
ATMEL Corporation
|
| WE256K8 |
512Kx8 CMOS EEPROM
|
White Electronic Designs Corporation
|
| IC62LV5128LL IC62LV5128L IC62LV5128L-55B IC62LV512 |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
