| PART |
Description |
Maker |
| MCH5811 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| CPH6612 |
Nch Nch
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| CPH5614 |
Nch Nch
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| MCH5823 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| MCH5818 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| MCH5819 |
Nch SBD
|
SANYO
|
| CPH5819 |
Nch SBD
|
SANYO
|
| ES6U41 |
2.5V Drive Nch SBD MOSFET
|
Rohm
|
| US5U2 |
4V Drive Nch SBD MOSFET
|
Rohm
|
| QS5U1606 |
2.5V Drive Nch SBD MOS FET
|
Rohm
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| SCH2819 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
